부산대학교 도서관

Ni, Si and SiO₂ films were implanted by 350 keV Bi^+ ions at room temperature with fluences of 1×10^(16) and 2×10^(16) ions/㎤. The depth distributions of implanted Bi^+ ions in Ni, Si and SiO₂ films were by investigated by Rutherford backscattering. The results show that the depth distributions of implanted Bi^+ ions into Ni, Si and SiO₂ films have obeyed nearly Gaussian distributions. The maximum difference between experimental and calculated values is less than 18 % for mean projected range. Experimental range straggling deviated significantly from calculated value. The possible reasons are discussed.