학술논문
Borderless vias with HSQ gap filled metal patterns having high etching resistance
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Patent
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Abstract
Spacings between metal features are gap filled with HSQ. Portions of the deposited HSQ adjoining the side surfaces and upper surface of a metal feature are selectively heated to increase the density and etch resistance of the adjoining HSQ portions, thereby enabling formation of reliable, voidless, low resistance, borderless vias. In an embodiment of the present invention, selective heating is effected by heating a metal line to indirectly heat the adjoining portions of the HSQ layer, as by infrared heating.