학술논문
Resist pattern forming method and method of manufacturing semiconductor device
Document Type
Patent
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Abstract
A resist pattern forming method includes forming a chemically amplified resist film on a substrate, forming a latent image in the resist film by irradiating an energy ray, contacting a liquid to a surface of the resist film, increasing temperature of the resist film to first temperature after the forming the latent image and the contacting, the first temperature being lower than a reaction start temperature at which an acid catalysis reaction occurs in the resist film, maintaining the temperature of the resist film at the first temperature for a predetermined time, increasing the temperature of the resist film to second temperature being not lower than the reaction start temperature after a lapse of the predetermined time, decreasing the temperature of the resist film increased to the second temperature to a temperature lower than the reaction start temperature, and developing the resist film after the decreasing the temperature.