학술논문
Room Temperature Radiation Testing of a 500 °C Durable 4H-SiC JFET Integrated Circuit Technology
Document Type
Report
Author
Source
Subject
Language
English
Abstract
Total ionizing dose (TID) and single-event effect (SEE) room-temperature radiation test results are presented for developmental prototype 4H-SiC junction field effect transistor (JFET) semiconductor integrated circuits (ICs) that have demonstrated prolonged operation in extremely high-temperature (500 °C) environments. The devices tested demonstrated over 7 Mrad(Si) TID tolerance and no destructive SEE susceptibility.