학술논문
Evaluation of radiation effects in re-oxidized nitrided oxide devices by hot carrier stressing at 77 K
Document Type
Report
Source
New Mexico Univ., The Fifth NASA Symposium on VLSI Design.
Subject
Language
English
Abstract
An attempt has been made to understand the mechanisms of radiation induced degradation by using different types of hot carrier (HC) stressing experiments. The degradation of re-oxidized nitrided oxide gate dielectric due to irradiation and hot carriers are reported. The effect of electron and hole traps of the virgin device on radiation induced threshold voltage shift is discussed.