학술논문
Metal Contact Processing Experiments Towards Realizing 500 °C Durable RF 4H-SiC BJTs
Document Type
Report
Source
Subject
Language
English
Abstract
This paper presents results from metal contact processing experiments towards the implementation of durable 500 °C high-frequency 4H-SiC bipolar junction transistors (BJTs). Specifically, p-type ohmic contacts have been demonstrated on a 0.25 μm-thick p-type homoepitaxial layer of doping 8 x 1018 ± 4 x 1018 cm-3. Preliminary current-voltage characteristics of fabricated BJTs are presented.