학술논문
분자선에피택시에 의해 성장한 ZnO 나노결정 박막에 완충층 두께와 활성층 성장 온도가 미치는 효과
Effects of Buffer-layer Thickness and Active-layer Growth Temperature on ZnO Nanocrystalline Thin Films Grown by Molecular Beam Epitaxy
Effects of Buffer-layer Thickness and Active-layer Growth Temperature on ZnO Nanocrystalline Thin Films Grown by Molecular Beam Epitaxy
Document Type
Article
Author
김병구 / Byung Gu Kim; 남기웅 / Gi Woong Nam; 박영빈 / Young Bin Park; 박형길 / Hyung Gil Park; 임재영 / Jae Young Leem
Source
대한금속재료학회지 / Korean journal of metals and materials. Sep 01, 2014 52(9):739
Subject
Language
Korean
English
English
ISSN
1738-8228
Abstract
ZnO thin films were deposited on a Si (100) substrate by plasma-assisted molecular beam epitaxy (PA-MBE). Growth of ZnO thin films on a Si substrate is limited due to the large difference between the lattice constants of ZnO and Si. In this research, we studied the effects of the buffer-layer thickness and active-layer growth temperature on the structural and optical properties of ZnO thin films. Scanning electron microscopy, X-ray diffraction, and photoluminescence were carried out to investigate the structural and optical properties of the ZnO thin films. The structural and optical properties of the ZnO thin films were improved when the buffer layers were grown for 20 min and the active layers were grown at 800 ℃.(Received September 9, 2013)