학술논문
RF 스퍼터링 시스템을 이용하여 증착한 비정질 Ga2 O3 박막의 급속 열처리 조건에 따른 결정성과 광학적 특성 변화
The Effect of Crystallographic and Optical Properties Under Rapid Thermal Annealing Conditions on Amorphous Ga2 O3 Deposited Using RF Sputtering System
The Effect of Crystallographic and Optical Properties Under Rapid Thermal Annealing Conditions on Amorphous Ga
Document Type
Article
Author
Source
전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) / Journal of the Korean Institute of Electrical and Electronic Material Engineers. Nov 01, 2023 36(6):576
Subject
Language
Korean
English
English
ISSN
1226-7945
Abstract
The Ga2O3 thin films were deposited using an RF sputtering system and the effect of crystallographic and optical properties under rapid thermal annealing conditions on Ga2O3 thin film was evaluated. A rapid thermal annealing method can fabricate a crystalline Ga2O3 thin film which is applied to various fields with a low cost and a high efficiency compared with the conventional post-annealing method. In this study, the Ga2O3 treated at 900℃ for 1 min showed the beta and gamma phases in XRD measurement. In optical properties, the crystalline Ga2O3 represented a high transmittance of more than 80% in the visible region and was calculated with a high optical bandgap energy of 4.58 eV. The beta and gamma phases Ga2O3 can be obtained by adjusting the rapid thermal annealing temperatures, and the various properties such as the optical bandgap energy can be controlled. Moreover, it is expected that crystalline Ga2O3 can be applied to various devices by controlling not only temperature but process time.