학술논문

Invited Paper : Correlation between Physical Defects and Performance in AlGaN/GaN High Electron Mobility Transistor Devices
Document Type
Article
Source
Transactions on Electrical and Electronic Materials / Transactions on Electrical and Electronic Materials. Apr 25, 2010 11(2):49
Subject
AlGaN/GaN
High electron mobility transistor
Reliability
Photon emission microscopy
Leakage current
Language
English
ISSN
1229-7607