부산대학교 도서관

The mm-wave band, a spectrum range traditionally considered mostly for military applications, has recently found fertile application cases in commercial sectors. Especially, the availability of the unlicensed band around 60 GHz has attracted recent growing attention as it enables very high data rate communication systems despite its high attenuation level in the earth atmosphere. Although initially considered very challenging, the implementation of mm-wave circuits with CMOS technology has now become a mainstream owing to the aggressive scaling of CMOS technology and consequent rapid enhancement in the device operation speed. Additional favorable features of CMOS technologies such as high reliability and low cost make its commercial applications more attractive.In this thesis, two versions of low noise amplifiers (LNAs) operating V-band have been developed. Firstly, a V-band LNA based on 0.13-㎛ low-cost RFCMOS technology has been designed, fabricated and characterized. A major effort was made to develop an LNA to operating near . This LNA achieved maximum gain of 18.6 dB and noise figure of 7.0 dB. Additionally, the effect of dummy fills was analyzed in this LNA. Secondly, a wide-band LNA with gain controllable function based on high performance 65-㎚ RFCMOS technology has been designed, fabricated and characterized. This circuit achieved a wide-band characteristics covering 58 - 72 GHz range that corresponds to entire bandwidth of WPAN systems, also exhibiting improved linearity with gain controllable function.