부산대학교 도서관

The polycrystalline specimens of the thermoelectric materials Zn4Sb3 were prepared by a hot-pressing method with in various temperatures and pressures and their thermoelectric properties were evaluated in the temperature range from 298 K to 673 K. A single phase of Zn4Sb3 was obtained in the samples prepared at 673 K with the pressure above 150 MPa, whereas ZnSb was placed in the Zn4Sb3 matrix for the samples prepared at 100 MPa. The electrical transport properties of the single phase compound showed p-type conduction and metallic transport behavior based on the temperature dependence. The sample produced at 673 K under pressure of 200 MPa exhibited the highest ZT value of 1.36 at 673 K. It was proposed that the dense and single-phase Zn4Sb3 compound is a route to achieve a high thermoelectric performance. In this study, the specimens of doped Zn4Sb3 were also investigated. As a dopant, Alkali-earth metal(Mg, Ca, Sr, Ba), pre-transition metal(Sc, Ti, Fe, Zr, Y, Eu), Cu/Ag-Ga/In were considered. The polycrystalline specimens of doped Zn4Sb3 were prepared by hot-pressing method and their thermoelectric properties were evaluated. Thermoelectric properties of doped Zn4Sb3 were not improved obviously. however, their thermal conductivity was reduced when some element with higher mass than Zn doped.