학술논문
4중 결합 마이크로스트립 전송선로간의 원단 크로스톡 분석
Analysis for Far-End Crosstalk Among Quadruple-Coupled Microstrip Lines
Analysis for Far-End Crosstalk Among Quadruple-Coupled Microstrip Lines
Document Type
Article
Author
Source
한국지식정보기술학회 논문지, 18(5), pp.1091-1096 Oct, 2023
Subject
Language
한국어
ISSN
2734-0570
1975-7700
1975-7700
Abstract
반도체는 모든 디지털 기기에 탑재되며 제품의 품질을 좌우할 뿐만 아니라 국가 간의 경쟁으로 인해 그 중요성이 커지고 있다. 현재 반도체 산업은 부가가치가 높은 나노미터(nm)급의 미세공정 구현 경쟁이 심화되고 있다. 특히 이러한 반도체 미세공정을 활용한 마이크로웨이브 집적회로(MMIC)에는 신호 전송을 위한 회로 내부의 결선이나 상호접속을 위해 전송선로가 구현된다. 초고주파 집적회로(MMIC)에서 사용되는 전송선로는 한 지점으로부터 다른 지점으로 전기적 신호를 운반하는 마이크로스트립 구조의 전송선로이다. 이러한 마이크로스트립 전송선로는 수 GHz 이상의 높은 주파수를 전송하므로 이웃한 전송선로 간의 전자기적 영향을 무시할 수 없다. 마이크로스트립 전송선로 간의 전자기적 영향에 대한 연구는 오래전부터 이루어져 왔으며, 이러한 연구들을 통하여 전송선로 간의 전자기적 영향들이 신호 전송 성능에 영향을 주지 않도록 전송선로 간의 간격을 설계하는 근거가 되었다. 하지만 앞으로 구현될 mmWave대역의 5G 통신시스템 장치와 AI스마트 디바이스에 들어갈 RF반도체 소자들은 더욱 집적화가 이루어져야 하며 전송선로간의 간격을 더욱 좁혀야 할 것이다. 본 논문에서는 4개의 다중 전송선로에서 자성유전체를 활용하여 원단(far-end) 크로스톡(crosstalk) 특성을 분석한다. 자성유전체의 크로스톡 저감 효과를 통해 전송선로의 성능을 개선하고 앞으로 다가올 차세대(above 6GHz) 통신과 AI시대의 광대역 디바이스의 MMIC 구현에 활용할 수 있는 기반을 제시하였다.
Semiconductors are integrated into all digital devices and their importance has grown not only in determining the quality of products but also due to competition between countries. Currently, the semiconductor industry faces intense competition in implementing nanometer-scale fine processes with high added value. Particularly, in microwave integrated circuits (MMIC) utilizing these semiconductor fine processes, transmission lines are implemented for internal wiring or interconnections in circuits used for signal transmission. The transmission lines used in MMIC are microstrip structures that carry high frequencies ranging from several GHz to THz, making it impossible to ignore the electromagnetic effects between neighboring transmission lines. Researchs on the electromagnetic effects between microstrip transmission lines have been conducted for a long time, and through such studies, the design of the spacing between transmission lines has become a basis for minimizing the electromagnetic impacts on signal transmission performance. However, future RF semiconductor components in 5G communication systems operating in the mmWave band and AI smart devices require even greater integration, necessitating narrower spacing between transmission lines. This paper analyzes the far-end crosstalk characteristics in four multiple transmission lines using magneto-dielectric materials. By leveraging the crosstalk reduction effect of magneto-dielectric materials, this research aims to improve the performance of transmission lines and provide a foundation for implementing highly integrated circuits in the upcoming next-generation (above 6GHz) communication and AI era's wide-bandwidth devices.
Semiconductors are integrated into all digital devices and their importance has grown not only in determining the quality of products but also due to competition between countries. Currently, the semiconductor industry faces intense competition in implementing nanometer-scale fine processes with high added value. Particularly, in microwave integrated circuits (MMIC) utilizing these semiconductor fine processes, transmission lines are implemented for internal wiring or interconnections in circuits used for signal transmission. The transmission lines used in MMIC are microstrip structures that carry high frequencies ranging from several GHz to THz, making it impossible to ignore the electromagnetic effects between neighboring transmission lines. Researchs on the electromagnetic effects between microstrip transmission lines have been conducted for a long time, and through such studies, the design of the spacing between transmission lines has become a basis for minimizing the electromagnetic impacts on signal transmission performance. However, future RF semiconductor components in 5G communication systems operating in the mmWave band and AI smart devices require even greater integration, necessitating narrower spacing between transmission lines. This paper analyzes the far-end crosstalk characteristics in four multiple transmission lines using magneto-dielectric materials. By leveraging the crosstalk reduction effect of magneto-dielectric materials, this research aims to improve the performance of transmission lines and provide a foundation for implementing highly integrated circuits in the upcoming next-generation (above 6GHz) communication and AI era's wide-bandwidth devices.