부산대학교 도서관

InP-based hetero-junction bipolar transistors (HBTs) are attractive for various millimeter-wave and terahertz electronics due to their ultrahigh frequency performance. Therefore, the study of their irradiation reliability is extremely urgent. In this work, 2 MeV proton irradiation experiment has been carried out on self-fabricated N+Np+ InP/InGaAs hetero-junction. The degradation mechanisms have systematically been studied after exposure to protons of 5 × 1013 H+/cm2. The voltage range of recombination current at low forward bias has been largely expanded from 0-0.2 V to 0–0.6 V. Furthermore, the interface states properties have been characterized by utilizing the frequency-dependent conductance technique, the interface states density (Dit) has increased from approximately 9.02 × 1012 cm-2 eV-1–1.99 × 1013 cm-2 eV-1 to 9.51 × 1012 cm-2 eV-1–2.00 × 1013 cm-2 eV-1 after irradiation. The study would be great significance for understanding the evolution of proton irradiation on relative devices.