학술논문

Electrical and Optical Properties of Ga-Doped ZnO Films Grown on Glass and Plastic Substrates by Using Plasma-Assisted Deposition
Document Type
Article
Source
Journal of the Korean Physical Society, 53(5), pp.2947-2950 Nov, 2008
Subject
물리학
Language
English
ISSN
1976-8524
0374-4884
Abstract
Ga-doped zinc-oxide (GZO) films grown under various Ga/Zn supply ratios were carefully characterized by using Hall measurements and optical transmittance measurements to investigate the electrical and the optical properties of the GZO films on glass, polyethylene terephthalate (PET), and polycarbonate (PC) substrates. The resistivity of the GZO films grown at 290 ℃ on glass substrates ranged from 4 × 10-2 cm to 3 × 10-4 cm for Ga/Zn supply ratios from 0 % to 0.5 %. The growth of the GZO films at a low temperature of 90 ℃ was also performed on glass, PET, and PC substrates. When the Ga/Zn supply ratios were 0.05 - 0.1 %, the 90 ℃-grown GZO films on glass substrates showed resistivities similar to those of 290 ℃-grown GZO films. The 90 ℃-grown GZO films on PET and PC substrates showed resistivities of 1 × 10-3 cm and 4 × 10-4 cm, respectively. The Hall carrier density was 8 × 1020 cm-3, which was almost the same value as that of the 90 ℃-grown GZO films on glass substrates. The GZO films on PET and PC substrates also showed visible transparency as good as that of the GZO films on glass substrates, and the average transmittance in the visible region was higher than 85 %.