학술논문
Doping in Homoepitaxial ZnO Films: Effect of Intentional and Unintentional Impurities on the Optical and the Electrical Properties
Document Type
Article
Author
Source
Journal of the Korean Physical Society, 53(5), pp.2888-2892 Nov, 2008
Subject
Language
English
ISSN
1976-8524
0374-4884
0374-4884
Abstract
Homoepitaxial layers grown by liquid phase epitaxy on hydrothermally grown ZnO bulk wafers are studied by means of temperature-dependent photoluminescence. The properties of the films are compared to those of hydrothermal ZnO substrates. The effect of Ga doping is studied. Liquid phase epitaxy is shown to be a promising method for achieving substantial variations of the electrical and the luminescent properties of ZnO.