학술논문

Wireless Communication at 310 GHz Using GaAs High-Electron-Mobility Transistors for Detection
Document Type
Article
Source
Journal of Communications and Networks, 15(6), pp.559-568 Dec, 2013
Subject
전자/정보통신공학
Language
English
ISSN
1976-5541
1229-2370
Abstract
We report on the first error-free terahertz (THz) wirelesscommunication at 0.310 THz for data rates up to 8.2 Gbps using a18-GHz-bandwidth GaAs/AlGaAs field-effect transistor as a detector. This result demonstrates that low-cost commercially-availableplasma-wave transistors whose cut-off frequency is far below THzfrequencies can be employed in THz communication. Wirelesscommunication over 50 cm is presented at 1.4 Gbps using a unitravelling-carrier photodiode as a source. Transistor integration isdetailed, as it is essential to avoid any deleterious signals that wouldprevent successful communication. We observed an improvementof the bit error rate with increasing input THz power, followed bya degradation at high input power. Such a degradation appearsat lower powers if the photodiode bias is smaller. Higher-dataratecommunication is demonstrated using a frequency-multipliedsource thanks to higher output power. Bit-error-ratemeasurementsat data rates up to 10 Gbps are performed for different inputTHz powers. As expected, bit error rates degrade as data rate increases. However, degraded communication is observed at somespecific data rates. This effect is probably due to deleterious cavityeffects and/or impedance mismatches. Using such a system, realtimeuncompressed high-definition video signal is successfully androbustly transmitted.