학술논문

Origin of the Parasitic (7 7 17) Domain on Reconstructed Si(5 5 12)-2 X 1
Document Type
Article
Source
Journal of the Korean Physical Society, 49(1), pp.181-186 Jul, 2006
Subject
물리학
Language
ISSN
1976-8524
0374-4884
Abstract
From reconstructed Si(5 5 12)-2 × 1, the area of the locally-converted (7 7 17) domain has been detected using scanning tunneling microscopy (STM). The atomic structure of (7 7 17) domain turns out to be equal to that of Si(5 5 12)-2 × 1, simply missing one of the (3 3 7) sections, that is, D(3 3 7) with a dimer-facing-adatom (D/A) row. In this structural transformation from (5 5 12) to (7 7 17), neither the number of atoms nor the dangling-bond number changes, but the surface atoms simply rebond under the external stress originating from the (1 1 3) facet parallel to the 1-D row. Through the distribution of the (7 7 17) domain, the direction and the size of the compressive surface-stress existing on Si(5 5 12)-2 × 1 can be deduced, which implies that the (7 7 17) domain can be utilized as a nanometer-scale stress-indicator on the (5 5 12) domain.