부산대학교 도서관

We briefly report on the temperature dependence of the cutoff energy obtained from the midinfrared (MIR) photoresponse spectrum of an InAs/GaSb type-II superlattice photodetector. Distinctive absorption bandedges have been clearly detected in a series of MIR spectral responses taken in the temperature range of 30 - 280 K, with two levels being attributed to transitions from the heavy-hole (HH1) and the light-hole (LH1) subbands to the electron (E1) subband. The MIR cutoff energy reveals that the temperature dependence follows the Varshni empirical equation, ET = Eo - [αT2=(T + β)]. The parametric value obtained from the InAs/GaSb type-II strained superlattice has a linear relationship with those of the binary constituents of GaSb and InAs as a function of Eo while the value of β is a function of the reciprocal of Eo.