부산대학교 도서관

The nanoscale subsurface damage layer induced on a single crystal La3Ga5SiO14 during the Chemical Mechanical Polishing (CMP) process for surface finishing is removed by a post-CMP dry etching in Cl2/Ar inductively coupled plasmas. The electrical conductivity is recovered to the initial value (~1×10−4 Ω−1·cm−1) measured before being CMP-processed with a colloidal silica slurry at etch depths of 43-68 nm, while maintaining a smooth surface morphology. The depth of the subsurface damage layer formed in a langasite single crystal initially increases as a downward force applied to a single crystal La3Ga5SiO14 during the CMP process increases, and then saturates at depths ~68 nm, indicating that the subsurface damage layer induced by the mechanical stress does not form to a depth beyond a critical level.