부산대학교 도서관

GaN/InGaN heterostructure on r-plane Al$_2$O$_3$ substrate is grown by mixed-source hydride vapor phase epitaxy (HVPE). The InGaN/GaN heterostructure is grown by a selective-area growth (SAG) method. The heterostructure consists of an undoped GaN layer, an InGaN layer, and a Mg-GaN layer. NH$_3$ and gallium (or indium) chloride formed with HCl, which is flowed over for a mixed source, are used as gallium (or indium) and nitrogen sources. The gas flow rates of HCl and NH$_3$ are maintained at 10 sccm and 500 sccm, respectively. The temperature of the GaN source zone is 650 $^\circ$C. In the case of the InGaN, the temperature of the source zone is 900 $^\circ$C. The growth temperatures of the GaN and InGaN layers are 820 $^\circ$C and 850 $^\circ$C, respectively. The electroluminescence (EL) peak of the GaN/InGaN heterostructure is 468 nm and the full width at half maximum (FWHM) is 89.7 nm. These results demonstrate that the heterostructure of III-nitrides on r-plane sapphire can be successfully grown by mixed-source HVPE.