부산대학교 도서관

Sapphire was etched in an inductively coupled plasma equipment using BCl$_3$-based gas combination. The etch %%@ characteristics of sapphire were investigated as functions of additive gas, inductive power, and dc bias voltage. %%@ In the case of additive gas effects, 380 nm/min of etch rate could be obtained in BCl$_3$/Cl$_2$ and the %%@ anisotropic etch profile could be observed in BCl$_3$/HBr. From the ion saturation currents measured by Langmuir %%@ probe and optical emission intensities by OES, sapphire etch characteristics appeared to be controlled by the BCl %%@ radicals in the plasma. The effects of inductive power and dc bias voltage on the sapphire etch rate were studied %%@ in BCl$_3$/HBr/Ar plasmas. The results showed that the increase of inductive power and dc bias voltage increased %%@ the sapphire and photoresist etch rates almost linearly. The obtained highest sapphire etch rate in the %%@ BCl$_3$/HBr/Ar plasma was 550 nm/min with about 0.87 of the etch selectivity over photoresist and 75 degree of etch %%@ profile angle at 1400 Watts of inductive power and -800 Volts of dc bias voltage.