학술논문
Characterization of MOCVD-TiO$_2$ and ZrO$_2$ Insulating Layers in MFIS Structures by DLTS and ICTS Methods
Document Type
Article
Author
Source
Journal of the Korean Physical Society, 42(IV), pp.1354-1356 Apr, 2003
Subject
Language
ISSN
1976-8524
0374-4884
0374-4884
Abstract
We demonstrated deep level transient spectroscopy (DLTS) and isothermal capacitance transient spectroscopy (ICTS) measurements for metal/insulator/semiconductor (MIS) and metal/ferroelectric/insulator/semiconductor (MFIS) structures using insulating TiO2, ZrO2 and ferroelectric Pb(Zr,Ti)O3 (PZT) layers grown by metalorganic chemical vapor deposition (MOCVD). Interface trap densities of MIS diodes with ZrO2 and TiO2 layers measured by the DLTS method were 1:5 3:9 1011 and 5:2 5:5 1011 eV..1cm..2, respectively. By the ICTS method, interface trap densities were successfully measured as 5:4 1011 and 1:5 1012 eV..1cm..2 for Au/PZT/ZrO2/Si diodes with and without plasma nitridation of Si surface.