학술논문
Characterization of PZT Capacitors with Ir Electrodes Prepared Solely by Low-Temperature MOCVD
Document Type
Article
Author
Source
Journal of the Korean Physical Society, 42(IV), pp.1203-1206 Apr, 2003
Subject
Language
ISSN
1976-8524
0374-4884
0374-4884
Abstract
Low-temperature MOCVD of Pb(Zr,Ti)O3 (PZT) thin lms and Ir lms was achieved. Using seed layer method and appropriate source gas combination method, PZT thin lms were successfully grown at 390-445 C. Ir thin lms as electrodes were also prepared at 280-350 C. Combining low-temperature MOCVD of PZT thin lms as a ferroelectric layer and Ir as an electrode, PZT capacitors with Ir electrodes were prepared solely by MOCVD. Even when PZT was deposited at low temperatures, 395 C and 445 C, PZT capacitors showed good D-E hysteresis loops with 2Pr of 20.0 C/cm2 and 36.9 C/cm2, respectively.