학술논문
Inversion of Magnetoresistance in La1−xSrxMnO3 /Nb-doped SrTiO3/CoFe Junctions
Document Type
Article
Source
Journal of the Korean Physical Society, 63(3), pp.706-710 Aug, 2013
Subject
Language
English
ISSN
1976-8524
0374-4884
0374-4884
Abstract
Magnetoresistance (MR) devices using degenerated oxide semiconductors, Nb-doped SrTiO3,(Nb-STO) as intermediate layers between two ferromagnets were fabricated and their magneticand transport properties were evaluated. Magnetic junctions using the trilayer films showed MRof 5% at 4.2 K, and the sign and the magnitude of the MR were changed depending on thethickness of Nb-STO layers. The origin of the inversion of the MR is not clear, however we considerspin injection from ferromagnetic electrodes to Nb-STO through Schottky tunnel barriers plays animportant role.