학술논문
Preparation and Properties of Inverse Perovskite Mn3GaN Thin Films and Heterostructures
Document Type
Article
Author
Source
Journal of the Korean Physical Society, 63(3), pp.299-301 Aug, 2013
Subject
Language
English
ISSN
1976-8524
0374-4884
0374-4884
Abstract
Thin films and heterostructures of Mn3GaN with an inverse perovskite structure were grownepitaxially on SrTiO3 (001) and (La0.18Sr0.82)(Al0.59Ta0.41)O3 (001) (LSAT) substrates by ionbeam sputtering, and their structural and electrical properties have been investigated. Mn3GaNepitaxial thin films showed metallic behavior of temperature-dependent resistivity with a smallmaximum at 290-340 K. The maximum resistivity could be attributed to the magnetic transitionfrom antiferromagnetism to paramagnetism. It has been found that epitaxial heterostructuresformed by ferroelectric Ba0.7Sr0.3TiO3 and Mn3GaN layers exhibit a large magnetocapacitanceeffect of more than 2000% in an applied magnetic filed of 1.5 T.