학술논문
Ferroelectric polarization effect on hysteresis behaviors of single-walled carbon nanotube network field-effect transistors with lead zirconate-titanate gating
Document Type
Article
Author
Source
Current Applied Physics, 18(3), pp.324-328 Mar, 2018
Subject
Language
English
ISSN
1567-1739
Abstract
We report the fabrication of single-walled carbon nanotube (SWCNT) network transistors by ferroelectric Pb(Zr0.4Ti0.6)O3 (PZT) bottom-gating and investigate the polarization effects of PZT on the transport properties of the transistor device. Our devices exhibit typical p-channel transistor characteristics and a large hysteresis loop with high ON/OFF current ratio and large ON current as well as memory window (MW) measured up to 5.2 V. The origin of clockwise hysteresis is attributed to ferroelectric polarization modulated charge trapping/de-trapping process in the interface states between SWCNT networks and PZT. The retention time about 104s with two high stable current states preliminarily demonstrates great potential for future non-volatile memory applications based on such SWCNT/PZT hybrid systems.