학술논문
Effect of Annealing on the Microstructural and Optical Properties of InAs Quantum Dots Grown on GaAs Buffer Layers
Document Type
Article
Source
Journal of the Korean Physical Society, 45(3), pp.799-802 Dec, 2004
Subject
Language
English
ISSN
1976-8524
0374-4884
0374-4884
Abstract
The eect of thermal annealing on self-assembled InAs/GaAs quantum dots (QDs) has been investigated by using transmission electron microscopy (TEM) and photoluminescence (PL) measurements. The TEM images showed that the lateral size and density of the InAs QDs were not changed signicantly up to 700 C. When the InAs/GaAs QDs were annealed at 750 C, while the lateral size of the InAs QDs increased, their density decreased. The InAs QDs disappeared due to annealing at 850 C. PL spectra showed that peaks corresponding to the interband transitions of the InAs QDs shifted slightly towards the high-energy side and that the full width at half maximum of the peak decreased with an increase in annealing temperature. The behavior of the PL peak was attributed to interdiusion between the InAs QDs and the GaAs capping layer. These results can help to give an improved understanding of the eect of thermal annealing on the microstructural and optical properties of InAs/GaAs QDs.