학술논문

Annealing effect of InGaAsN/GaAsSb quantum wells diodes on InP substrates(Ⅱ) / InGaAsN/GaAsSbタイプII量子井戸ダイオードのアニール効果(Ⅱ)
Document Type
Journal Article
Source
JSAP Annual Meetings Extended Abstracts. 2016, :3373
Subject
21p-H112-5
III-V族エピタキシャル結晶
N添加混晶
compound semiconductor
quantum well
化合物半導体
結晶工学
量子井戸
Language
Japanese
ISSN
2436-7613