학술논문
C-Si反応を利用したGe量子ドット形成におけるC堆積量の最適化 / Optimization of C coverage in Ge quantum dot formation by using C-Si reaction on Si(100)
Document Type
Journal Article
Author
Source
JSAP Annual Meetings Extended Abstracts. 2016, :3515
Subject
Language
Japanese
ISSN
2436-7613