학술논문
27aB06 InGaN光励起MOVPEにおける薄膜物性の光強度依存性(窒化物(3),第34回結晶成長国内会議) / 27aB06 Influence of laser-power on properties of InGaN films grown by laser assisted MOVPE(NCCG-34)
Document Type
Journal Article
Author
Source
日本結晶成長学会誌 / Journal of the Japanese Association for Crystal Growth. 2004, 31(3):266
Subject
Language
Japanese
ISSN
0385-6275
2187-8366
2187-8366
Abstract
We carried out Nd: YAG pulse laser assisted MOVPE of InGaN at low temperatures in order to form the films with high indium mole fraction. The results suggest that reaction rate between group-III source gas and ammonia at growth surface is enhanced by the pulse laser irradiation. Moreover, it is found that pulse laser irradiation may enhance the surface migration of the elements, and crystalline quality becomes good.