부산대학교 도서관

It has been found that the photosensitivity of amorphous silicon (a-Si) photoreceptor fabricated by glow-discharge decomposition of (SiH4-B2H6-Ar) has specific relation to the peak-to-peak value of Rf Voltage (Vp-p) and the DC bias voltage (VDC) on the Rf powered-electrode. Namely, the lower the Vp-p value is depressed, the higher the photosensitivity is improved. Dependences of the Vp-p value on deposition parameters of a-Si:H (B) film such as gas pressure (P) , distance between Rf powered-electrode and aluminum substrate (l), Rf electric power (Rf), and dilution ratio of SiH4 to Ar (FSiH4/FAr) seem to indicate correlation of Vp-p with electron energy and electron density in the plasma. Furthermore, the Vp-p and VDC Values have been measured in the plasmas of He, Ne (rare-gases with no Ramsauer effect), Ar, Kr, Xe (rare-gases with Ramsauer effect), and H2, N2, CH4, SiH4 (molecular-gases). Interesting behaviors in Vp-p and VDC Seem to have correlation with collision cross sections (σ) of electrons (with the energy of 2-10 eV) in these gases.