학술논문
AlGaN/GaN系PチャネルHFETのMOS構造によるノーマリーオフ化 / Normally-off P-channel AlGaN/GaN HFET by introducing MOS gate structure
Document Type
Journal Article
Author
Source
JSAP Annual Meetings Extended Abstracts. 2015, :3039
Subject
Language
Japanese
ISSN
2436-7613