학술논문
Demonstration of 2.58THz detectors based on asymmetric channel transistors
Document Type
Journal Article
Author
Source
IEICE Electronics Express. :16
Subject
Language
English
ISSN
1349-2543
Abstract
This letter presents several antenna-coupled 2.58 THz direct detectors based on 55 nm standard CMOS process. Each detector consists of a patch antenna and a metal-oxide-semiconductor field-effect-transistor (MOSFET) with an asymmetric channel. We demon-strated four detectors with THz wave coupling into the source with different width ratios of drain and source, and found that the responsivity is proportional to its asymmetric ratio. The detectors’ output signal is amplified with a low noise amplifier and extracted with a lock-in amplifier. The measured results showed that 2.58THz detectors has a maximum responsivity (RV) of 822.5V/W, with a corrosponding noise equivalent power (NEP) of 24.2 pW/Hz0.5.