학술논문

Ultra-high-temperature Oxidation under Low Oxygen Partial Pressure toward Ideal SiO2/SiC Interface / 理想SiO2/SiC界面の実現に向けた超高温・低酸素分圧酸化の検討
Document Type
Journal Article
Source
JSAP Annual Meetings Extended Abstracts. 2016, :3302
Subject
16p-C302-6
IV族系化合物(SiC)
Interface defect
SiC MOS
Thermal oxidation
熱酸化
界面欠陥
結晶工学
絶縁膜/MOS構造
Language
Japanese
ISSN
2436-7613