학술논문
A Si Device Making Method by Using PAG Contained TARC to Enhance DOF of Lithography Process
Document Type
Journal Article
Source
Journal of Photopolymer Science and Technology. 2005, 18(3):415
Subject
Language
English
ISSN
0914-9244
1349-6336
1349-6336
Abstract
In this paper, a series of top anti-reflection coating (TARC) with different loading of photo acid generator (PAG) had been studied. The results show that PAG with longer diffusion length or higher loading level, in comparison with PAG contained in resist, has better performance for depth of focus (DOF) enhancement. Besides, we add some binder into the TARC to control the acid diffusion in TARC. Now we can control the diffusion of photo acid by using different TARC with different PAG and binder. Furthermore, when we examined the process window through all pitches, the range of DOF was improved from 0.02μm to 0.05μm. It is demonstrated the common window can be improved from 0.278μm to 0.324μm. From these results, we are convinced that TARC with PAG and binder can be used to enhance DOF for 65nm generation.