학술논문

Filling of Deep-sub-µm Through Holes and Trenches by High Vacuum Planar Magnetron Sputter / 高真空スパッタによる微細孔の埋込
Document Type
Journal Article
Source
Electrochemistry. 2001, 69(10):769
Subject
Deep-sub-µm Through-hole
Filling
High-vacuum Planar Magnetron Sputter
Trench
Language
Japanese
ISSN
1344-3542
2186-2451
Abstract
The filling of deep-sub micrometer through-holes and trenches with a high aspect ratio by the high vacuum planar magnetron sputter deposition of copper, which even at pressures lower than 10−5 Pa the discharge can be sustained by the applying of a high magnetic field and high target voltage, is investigated. It is found that good filling is achieved in a 1% nitrogen atmosphere at a low sputter pressure of 0.1 Pa, yielding copper films with resistivity of approximately 2 × 10−8 Ωm, equivalent to that prepared by the pure argon sputter.