학술논문
Formation of Graphene on the SiO2 Surfaces by SiC Surface Decomposition Method / SiC表面分解法を利用した絶縁基板上へのグラフェン形成に関する研究
Document Type
Journal Article
Author
Source
表面科学 / Hyomen Kagaku. 2011, 32(7):459
Subject
Language
Japanese
ISSN
0388-5321
1881-4743
1881-4743
Abstract
We have investigated the formation of graphene on the SiO2/Si (111) surfaces using scanning tunneling microscopy. When the SiC (111) film [1500 nm] formed on the SiO2 surfaces was annealed at 980oC, graphene layer was obtained on the SiC surface. When the thickness of the SiC film was 5 nm, the graphene was not observed. However, graphene layer was obtained on the SiO2 surfaces after annealing the C-covered SiC (111) [5 nm] film on the SiO2/Si (111) surfaces at 980oC.