학술논문
Growth of black-phosphorus Bi(110) ultra thin film on Si substrate / Si基板上における黒燐構造Bi超薄膜の成長過程
Document Type
Journal Article
Author
Source
Abstract book of Annual Meeting of the Japan Society of Vacuum and Surface Science. 2020, :1
Subject
Language
Japanese
ISSN
2434-8589
Abstract
Black-phosphorus (BP) like Bi(110) structure attracts attentions because it has been predicted to be a 2D topological insulator theoretically if its surface buckling is small enough. Although BP-like Bi(110) islands are widely known to nucleate on various substrates in the initial stage of epitaxial growth, it has not been elucidated how the islands grow in detail. We report the result of our detailed STM measurement of the growth of BP-like Bi(110) islands on Si(111)7×7 substrate. BP-like Bi(110) islands which consist of the stacking of paired bilayers have even number layers height exclusively. However it was found that not only even number but also odd number layers high Bi(110) islands nucleated. The coverage of Bi islands with odd number layers heights increased and got close to that of even number layers high Bi(110) islands. The Bi(110) islands with odd number layers heights were considered to have not the BP-like but the sandwich structure.