학술논문
Uniform Avalanche Breakdown and Parallel-Plane Breakdown Fields in GaN-on-GaN PN Diodes with Double-Side-Depleted Shallow Bevel Termination / 両側空乏ベベルメサ構造を有するGaN p-n接合ダイオードにおける均一なアバランシェ破壊の実現および平行平板破壊電界の評価
Document Type
Journal Article
Author
Source
JSAP Annual Meetings Extended Abstracts. 2019, :2859
Subject
Language
Japanese
ISSN
2436-7613