학술논문

Development of a ferroelectric capacitor with double-layered PbLa(Zr,Ti)O3 thin films aiming to lowering operation voltage and leakage current of FRAM / 低電圧動作FRAMにおける低リーク電流積層PbLa(Zr,Ti)O3キャパシタの開発
Document Type
Journal Article
Source
JSAP Annual Meetings Extended Abstracts. 2019, :1390
Subject
21a-C309-11
FRAM
capacitor
double-layered PLZT
キャパシタ
プロセス・評価技術
強誘電体薄膜
積層PLZT
薄膜・表面
Language
Japanese
ISSN
2436-7613