학술논문
Equilibrium strain and dislocation density in exponentially graded [Si.sub.1-x][Ge.sub.x]/Si(001)
Document Type
Technical report
Author
Source
Journal of Applied Physics. Dec 1, 2010, Vol. 108 Issue 11, p113525
Subject
Language
English
ISSN
0021-8979
Abstract
The equilibrium strain and misfit dislocation density profiles for heteroepitaxial [Si.sub.1-x][Ge.sub.x]/Si(001) with convex exponential grading of composition. Appropriate analytical models are described for the strain and dislocation density profile in exponentially graded [Si.sub.1-x][Ge.sub.x]/Si(001) that is used for calculating the effective stress and rate of lattice relaxation.