학술논문
Effect of Cl2 plasma treatment and annealing on vanadium based metal contacts to Si-doped Al0.75Ga0.25N
Document Type
Report
Source
Journal of Applied Physics. Sept 28, 2017, Vol. 122 Issue 12
Subject
Language
English
ISSN
0021-8979
Abstract
The electrical properties of V/Al/Ni/Au metal contacts to Si-doped Al0.75Ga0.25N layers, X-ray photoelectron spectroscopy analysis is performed on differently treated AlGaN:Si surfaces before metal deposition. Cl2 plasma etching of AlGaN increases the aluminum/nitrogen ratio at the surface, and Al oxide or oxynitride is always formed by any surface treatment applied after etching.This treatment can be used to significantly reduce the operating voltage of current deep ultraviolet light emitting diodes which will increase their wall plug efficiency and lower the thermal stress during their operation.