학술논문

The effect of self-heating in LDMOSFET expansion regime
Document Type
Technical report
Source
IEEE Transactions on Electron Devices. Nov 2012, Vol. 59 Issue 11, p3042, 6 p.
Subject
Metal oxide semiconductor field effect transistors -- Innovations
Numerical analysis -- Usage
Simulation methods -- Usage
Voltage -- Measurement
Ionization -- Analysis
Electric fields -- Usage
Language
English
ISSN
0018-9383