학술논문

Fabrication of \hbox {Si}_{1 - x}\hbox {Ge}_{x}/\hbox {Si} pMOSFETs using corrugated substrates for improved I_{\rm ON} and reduced layout-width dependence
Document Type
Technical report
Source
IEEE Transactions on Electron Devices. Jan 2013, Vol. 60 Issue 1, p153, 6 p.
Subject
Silicon compounds -- Electric properties
Metal oxide semiconductor field effect transistors -- Innovations
Control systems -- Usage
Electron mobility -- Methods
Voltage -- Measurement
Language
English
ISSN
0018-9383