학술논문
Characterization of Co.sub.x Ni.sub.y O hybrid metal oxide nanoparticles as charge trapping nodes in nonvolatile memory devices
Document Type
Report
Author
Source
Solid State Electronics. Oct, 2008, Vol. 52 Issue 10, p1530, 6 p.
Subject
Language
English
ISSN
0038-1101
Abstract
To link to full-text access for this article, visit this link: http://dx.doi.org/10.1016/j.sse.2008.06.014 Byline: Chin-Lung Cheng (a)(b), Chien-Wei Liu (c), Kuei-Shu Chang-Liao (d), Ping-Hung Tsai (d), Jin-Tsong Jeng (e), Sung-Wei Huang (a), Bau-Tong Dai (c) Keywords: Hybrid metal oxide nanoparticles; Charge trapping nodes; Nonvolatile memory devices; Holes trapping; Co.sub.x Ni.sub.y O Abstract: The Co.sub.x Ni.sub.y O hybrid metal oxide nanoparticles (HMONs) embedded in the HfO.sub.x N.sub.y high-k dielectric as charge trapping nodes of the nonvolatile memory devices have been formed via the chemical vapor deposition using the Co/Ni acetate calcined and reduced in the Ar/NH.sub.3 ambient. A charge trap density of 8.96x10.sup.11 cm.sup.-2 and a flatband voltage shift of 500mV were estimated by the appearance of the hysteresis in the capacitance-voltage (C-V) measurements during the [+ or -]5V sweep. Scanning electron microscopy image displays that the Co.sub.x Ni.sub.y O HMONs with a diameter of [approximately equal to]10-20nm and a surface density of [approximately equal to]1x10.sup.10 cm.sup.-2 were obtained. The mechanism related to the writing characteristics are mainly resulted from the holes trapping. Compared with those devices with the Co.sub.x Ni.sub.y O HMONs formed by the dip-coated technique, memory devices with the Co.sub.x Ni.sub.y O HMONs fabricated by the drop-coated technique show improved surface properties between the Co.sub.x Ni.sub.y O HMONs and the HfON as well as electrical characteristics. Author Affiliation: (a) Institute of Mechanical and Electro-Mechanical Engineering, National Formosa University, Huwei, Yunlin 63201, Taiwan, ROC (b) Common Laboratories for Micro/Nano Science and Technology, National Formosa University, Huwei, Yunlin 63201, Taiwan, ROC (c) National Nano Device Laboratories, Tainan 74147, Taiwan, ROC (d) Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan, ROC (e) Department of Computer Science and Information Engineering, National Formosa University, Huwei, Yunlin 63201, Taiwan, ROC Article History: Received 12 May 2008; Accepted 7 June 2008 Article Note: (miscellaneous) Review of this manuscript was arranged by A. Iliadis, C. Richter, and A. Zaslavsky