부산대학교 도서관

To link to full-text access for this article, visit this link: http://dx.doi.org/10.1016/j.optcom.2005.12.024 Byline: Jie Liu (a), Yonggang Wang (b), Jimin Yang (a), Jingliang He (a), Xiaoyu Ma (b) Keywords: LT-GaAs; Nd:YVO.sub.4; QML Abstract: We have demonstrated an efficient and compact passively Q-switched and mode-locked (QML) 1064nm Nd:YVO.sub.4 laser by using a low temperature grown GaAs (LT-GaAs) saturable absorber as well as an output coupler. Stable QML with envelope duration as short as 10ns and Q-switched repetition rate of 36kHz was obtained. It is the shortest envelope duration as far as we know, and it is so short that it can be used as Q-switching pulses directly. At 6.9W of the incident pump power, average output power of 1.24W was achieved and the corresponding peak power and energy of a single Q-switched pulse were 3.44kW and 34.4[mu]J, respectively. The mode-locked pulses inside the Q-switched pulse envelope had a repetition rate of 780MHz. Author Affiliation: (a) College of Physics and Electronics, Shandong Normal University, Jinan 250014, China (b) Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100022, China Article History: Received 8 June 2005; Revised 7 December 2005; Accepted 12 December 2005