학술논문
Q-switched and mode-locked diode-pumped Nd:YAG laser with an LT-GaAs
Document Type
Report
Author
Source
Optik: International Journal for Light and Electron Optics. April 3, 2006, Vol. 117 Issue 4, p163, 4 p.
Subject
Language
English
ISSN
0030-4026
Abstract
To link to full-text access for this article, visit this link: http://dx.doi.org/10.1016/j.ijleo.2005.08.008 Byline: Jie Liu (a), Liyan Gao (a), Yonggang Wang (b), Wenmiao Tian (a), Jingliang He (a), Xiaoyu Ma (b) Keywords: LT-GaAs; Nd:YAG; Diode-pump laser; Mode-locking; Q-switching Abstract: Simultaneous Q-switching and mode-locking (QML) is accomplished in a diode-pumped Nd:YAG laser using low-temperature GaAs (LT-GaAs) as the saturable absorber, which also acts as an output coupler at the same time. The repetition rate of the Q-switched envelope increased from 25 to 40kHz as the pump power increased from 2.2 to 6.9W. The mode-locked pulses inside the Q-switched pulse envelope had a repetition rate of 714MHz. A maximum average output power of 770mW was obtained. Author Affiliation: (a) College of Physics and Electronics, Shandong Normal University, Jinan 250014, China (b) Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China Article History: Received 4 March 2005; Accepted 16 June 2005