학술논문
Studies on the dielectric and relaxor behavior of sol-gel derived barium strontium zirconate titanate thin films
Document Type
Author abstract
Source
Materials Letters. July, 2007, Vol. 61 Issue 17, p3685, 4 p.
Subject
Language
English
ISSN
0167-577X
Abstract
To link to full-text access for this article, visit this link: http://dx.doi.org/10.1016/j.matlet.2006.12.017 Byline: A. Dixit (a), D.C. Agrawal (a), Y.N. Mohapatra (a), S.B. Majumder (b), R.S. Katiyar (b) Keywords: Relaxation phenomena; Phase transitions; Thin films; Doping effects Abstract: The dielectric behavior of sol-gel derived Ba.sub.0.80Sr.sub.0.20(Zr.sub.x Ti.sub.1-x)O.sub.3 (0.0[less than or equal to] x [less than or equal to]0.50) thin films is studied. A relaxor behavior is observed for x [greater than or equal to]0.35. The degree of relaxation increases with Zr content. The frequency dependence of the polar regions follows Vogel-Fulcher relation with a characteristic cooperative freezing at freezing temperature (T.sub.f). Below T.sub.f, a long range polarization ordering is likely to take place. The plausible mechanism of the relaxor behavior of BSZT thin films with Zr contents [greater than or equal to]0.35 has been proposed based on the measured temperature as well as frequency dependent dielectric data. The solid solution system is visualized as a mixture of Ti.sup.+4 rich polar regions and Zr.sup.+4 rich regions; with the increase in Zr content the volume fraction of the polar regions is progressively reduced. At and above 35.0 at.% Zr substitution the polar regions exhibit typical relaxor behavior. Author Affiliation: (a) Materials Science Program, Indian Institute of Technology, Kanpur, 208016, India (b) Department of Physics, University of Puerto Rico, PR 00931-3343, USA Article History: Received 13 September 2006; Accepted 11 December 2006