부산대학교 도서관

To link to full-text access for this article, visit this link: http://dx.doi.org/10.1016/j.apsusc.2008.09.022 Byline: M. Rosinski (a), B. Badziak (a), P. Parys (a), J. WoAowski (a), M. Pisarek (b) Keywords: Laser-matter interaction; Laser ion source; Electrostatic fields for acceleration Abstract: The laser-produced ion stream may be attractive for direct ultra-low-energy ion implantation in thin layer of semiconductor for modification of electrical and optical properties of semiconductor devices. Application of electrostatic fields for acceleration and formation of laser-generated ion stream enables to control the ion stream parameters in broad energy and current density ranges. It also permits to remove the useless laser-produced ions from the ion stream designed for implantation. For acceleration of ions produced with the use of a low fluence repetitive laser system (Nd:glass: 2Hz, pulse duration: 3.5ns, pulse energy:[approximately equal to]0.5J, power density: 10.sup.10 W/cm.sup.2) in IPPLM the special electrostatic system has been prepared. The laser-produced ions passing through the diaphragm (a ring-shaped slit in the HV box) have been accelerated in the system of electrodes. The accelerating voltage up to 40kV, the distance of the diaphragm from the target, the diaphragm diameter and the gap width were changed for choosing the desired parameters (namely the energy band of the implanted ions) of the ion stream. The characteristics of laser-produced Ge ion streams were determined with the use of precise ion diagnostic methods, namely: electrostatic ion energy analyser and various ion collectors. The laser-produced and post-accelerated Ge ions have been used for implantation into semiconductor materials for nanocrystal fabrication. The characteristics of implanted samples were measured using AES. Author Affiliation: (a) Institute of Plasma Physics and Laser Microfusion, P.O. Box 49, Hery Street 23, 00-908 Warsaw, Poland (b) Warsaw University of Technology, Material Science and Engineering Faculty, Warsaw, Poland Article History: Received 7 June 2008; Revised 9 September 2008; Accepted 9 September 2008