학술논문

Gate dielectric engineering of quarter sub micron AlGaN/GaN MISHFET: A new device architecture for improved transconductance and high cut-off frequency
Document Type
Academic Journal
Source
Solid State Electronics. Oct, 2008, Vol. 52 Issue 10, p1610, 5 p.
Subject
Architecture -- Analysis
Liquors -- Analysis
Language
English
ISSN
0038-1101
Abstract
To link to full-text access for this article, visit this link: http://dx.doi.org/10.1016/j.sse.2008.06.008 Byline: Ruchika Aggarwal (a), Anju Agrawal (b), Mridula Gupta (a), R.S. Gupta (a) Keywords: AlGaN/GaN MISHFET; Cut-off frequency; Gate dielectric engineering; T-gate; I-gate; Transconductance; Transconductance generation efficiency Abstract: In this paper analytical modeling for a novel three region gate dielectric engineered AlGaN/GaN Metal Insulator Semiconductor heterostructure field effect transistor (MISHFET) device architecture is presented which shows high transconductance and enhanced cut-off frequency at quarter micron gate lengths. Using a three region analysis along the horizontal direction in the gate dielectric region the expressions for transconductance and cut-off frequency of the device are obtained. It has been observed that using these gate dielectric schemes, improvements on device performance are observed over conventional MISHFET structures. Relative comparison of T and I-gate shaped structures is done with uniform gate dielectric profile and enhancement in microwave performance is observed. The proposed model is capable of modeling electrical characteristics like drain current, output conductance and threshold voltage of various other existent structures like uniform gate dielectric MISHFETs, HFETs and T-gate HFETs. The present model is based on closed form expression and does not involve any fitting parameter. The results obtained are compared with experimental data and show excellent agreement, thereby proving the validity of the model. Author Affiliation: (a) Semiconductor Devices Research Laboratory, Department of Electronic Science, University of Delhi, South Campus, New Delhi 110021, India (b) Department of Electronics, Acharya Narendra Dev College, University of Delhi, Kalkaji, New Delhi 110019, India Article History: Received 15 May 2008; Accepted 7 June 2008 Article Note: (miscellaneous) Review of this manuscript was arranged by A. Iliadis, C. Richter, and A. Zaslavsky